The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma
대기압 플라즈마를 이용한 산화물 박막 트랜지스터 표면처리에 관한 연구

Ga Young Kim, Kyong Nam Kim, Geun Young Yeom
2015 Journal of the Korean institute of surface engineering  
Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and
more » ... for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.
doi:10.5695/jkise.2015.48.1.007 fatcat:ackcwgrmovhxrcyxsxnkuiymne