Reactive Sputter Deposition of NiCrxOy Films Using NiCr Target

He YU, Tao WANG, Xiang DONG, Yadong JIANG, Roland WU
2016 Medžiagotyra  
In this paper an original numerical model, based on the standard Berg model, was used to simulate the growth mechanism of NiCrxOy deposited with changing oxygen flow during reactive sputter deposition. The effect of oxygen flow rate on the discharge voltage, deposition rate and the material elementary composition were investigated. The ratio of Ni and Cr content in the film was measured using energy-dispersive X-ray spectroscopy (EDX). EDX detected a decrease in the Cr concentration with the
more » ... tration with the increasing of oxygen flow rate due to the preferential oxidation of Cr to Cr2O3. Results show a reasonable agreement between numerical and experimental data. deposition parameters (deposition rate, target voltage) was systematically studied. MODEL The mathematical model describing the sputtering system is shown in Fig. 1 . The total input rate of the reactive gas (oxygen) is denoted as Qtot. In this paper, it is assumed that the film structure is a mixture of Ni, NiO, Cr, and Cr2O3. The fractions of Ni, NiO, Cr, Cr2O3 at the target will be called θt1, θt2, θt3, and θt4, respectively. θs1, θs2, θs3, θs4 fractions are collecting area covered by Ni, NiO, Cr, Cr2O3, respectively (see Fig. 1 ).
doi:10.5755/ fatcat:kv5w4fvtsjabpb4j7wtqf444cu