Effect of oxygen on the properties of Ga2O3:Si thin films

A V Almaev, E V Chernikov, B O Kushnarev, N N Yakovlev
2019 Journal of Physics, Conference Series  
The results of studies of electrical and gas-sensitive characteristics of thin films Ga 2 O 3 :Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga 2 O 3 :Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was
more » ... gallium oxide was proposed.
doi:10.1088/1742-6596/1410/1/012201 fatcat:q42hdkhmongi3j3negxppgdo2u