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Valley splitting in Si quantum dots embedded in SiGe
Applied Physics Letters
We examine energy spectra of Si quantum dots embedded into Si_0.75Ge_0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses <6 nm valley splitting is found to be >150 ueV. Using the unique advantage of atomistic calculations we analyze the effect of buffer disorder on valleydoi:10.1063/1.2981577 fatcat:p3pqpls23fe4ngj3vqq3dmwnwm