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Preparation of Au/TiO2/Ti memristive elements via anodic oxidation
2017
Nanosistemy fizika himiâ matematika
In the present paper we report utilization of porous and barrier type of titania films formed by anodic oxidation as an active layer of the memristive element in the Au-TiO 2 -Ti structure. The comparison of semiconductor properties of porous and barrier type of anodic titania was performed via the Mott-Schottky technique. The obtained memristive elements show the bipolar type of switching governed by Schottky barrier screening. For barrier type film the switching potential is equal to −1.5 V
doi:10.17586/2220-8054-2017-8-6-823-829
fatcat:jtjvdfru2bgppf6uq5ieg7v3n4