A Time-Delay-Integration CMOS image sensor with pipelined charge transfer architecture

Hang Yu, Xinyuan Qian, Shoushun Chen, Kay Soon Low
2012 2012 IEEE International Symposium on Circuits and Systems  
In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynamic charge transfer path and tunable well capacity. A prototype chip of 1536×8 pixels was implemented using TSMC 0.18 m CMOS image sensor process. Photodiode and other transistors are floor-planned in
more » ... re floor-planned in different arrays, providing small pixel pitch of 3.25 m and high fill factor of 57%.
doi:10.1109/iscas.2012.6271566 dblp:conf/iscas/YuQCL12 fatcat:pqi66jus65aqxnxduxus4bqqdu