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An experimental and theoretical study of relative intensity noise �RIN� spectra of side-mode injection-locked Fabry-Pérot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz �free-running mode� to 12 GHz �injection-locked mode� and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-welldoi:10.1063/1.1290140 fatcat:udijtl25kbcs5on2owmtnwdnvq