Relative intensity noise characteristics of injection-locked semiconductor lasers

X. Jin, S. L. Chuang
2000 Applied Physics Letters  
An experimental and theoretical study of relative intensity noise �RIN� spectra of side-mode injection-locked Fabry-Pérot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz �free-running mode� to 12 GHz �injection-locked mode� and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well
more » ... such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results.
doi:10.1063/1.1290140 fatcat:udijtl25kbcs5on2owmtnwdnvq