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M odern wireless communications systems are now being almost fully integrated into radio frequency (RF) systems-on-chip (SOC). The power amplifi er (PA) is currently the gating element to the realization of a full complimentary metal-oxide-semiconductor (CMOS) RF-SOC solution due to its relatively poor performance when compared to counterparts designed in III-V compound semiconductor technologies. CMOS suffers in comparison for two main reasons: 1) Scaling ofdoi:10.1109/mmm.2010.939304 fatcat:l7wouwbmgbfsvoktnfvujbeiu4