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Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications
2014
Applied Physics Letters
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We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in
doi:10.1063/1.4857616
fatcat:vedzxoa4dzdclozggwtak7s7s4