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The design of modern semiconductor devices requires the numerical simulation of basic fabrication steps. We investigate some electrooreactionndiiusion equations which describe the redistribution of charged dopants and point defects in semiconductor structures and which the simulations should be based on. Especially, we are interested in pair diiusion models. We present new results concerned with the existence of steady states and with the asymptotic behaviour of solutions which are obtained byfatcat:2h6wkidxy5hdpcsikgxcse7ad4