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In this study, n-InGaN nanorods were grown directly on p-type Si (111) substrates by plasmaassisted molecular beam epitaxy (PA-MBE). The crystal structure is investigated using the reflection of high-energy electron diffraction patterns. Additionally, the morphology and optical properties of the InGaN nanorods were investigated using both scanning electron microscopy and room temperature photoluminescence spectra. The results showed that, the PL peak position shifted toward lower energy bydoi:10.23918/eajse.v4i3sip66 fatcat:pwexn2of7ra43jueggd7m75f4e