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For buried nano structure analyses, we combined a scanning probe microscope with either a UV laser or x-ray light source. Electron trapping process at Si/SiOx buried interface under UV laser irradiation was investigated with an electrostatic force microscope (EFM). The EFM signal synchronized with optical shutter operation revealed electron trapping process with the time constant of 33 ~ 87 s dependent on laser power. These large values reveal a quasi-stable photoionization state of thedoi:10.14723/tmrsj.32.243 fatcat:acb4e3r3snbmtd5azwfdgyhjxy