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Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
2018
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We have investigated the optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected both by the narrow x-ray peak widths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower x-ray peak widths for both symmetric and asymmetric reflections. We also note a marked improvement in surface morphology, from a columnar
doi:10.1184/r1/6507719
fatcat:jmshmtadlbh6ffsmu3ljzfsuse