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Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O 3 thin films were deposited via a sol-gel process on LaNiO 3 -coated silicon substrates. Films showed a strong ͑001͒ preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with thedoi:10.1063/1.1519944 fatcat:umag4tglzrbrfjasxat26dwp3a