Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei, M. H. Cheung, Zheng Kui Xu, Xin Li, Haydn Chen, Eugene V. Colla, T. B. Wu
2002 Applied Physics Letters  
Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O 3 thin films were deposited via a sol-gel process on LaNiO 3 -coated silicon substrates. Films showed a strong ͑001͒ preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the
more » ... eld along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 C/cm 2 , which is equal to that observed in bulk samples.
doi:10.1063/1.1519944 fatcat:umag4tglzrbrfjasxat26dwp3a