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A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design
16th International Conference on VLSI Design, 2003. Proceedings.
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A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.
doi:10.1109/icvd.2003.1183181
dblp:conf/vlsid/KumarV03
fatcat:ihdojofhhjgtxohmu6pbob35oy