III–V/Si integration technology for laser diodes and Mach–Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo
2019 Japanese Journal of Applied Physics  
This paper reviews a technology to heterogeneously integrate III-V semiconductors on a Si platform for the laser diodes and high-efficiency Mach-Zehnder modulators (MZMs) of optical transceivers. Membrane III-V semiconductor films provide efficient optical coupling between the III-V semiconductor devices and widely developed thin Si waveguide circuits. The membrane laser diode shows a fiber coupled output power from the Si waveguide of 4.6 mW and single-mode lasing with a side-mode suppression
more » ... atio of 49 dB. In addition, the high-efficiency MZM with a 700 μm long membrane InGaAsP/Si metal-oxide-semiconductor capacitor phase shifter shows a V π L of 0.09 Vcm, insertion loss of around 2 dB, and an eye opening at for 32 Gbit s −1 nonreturn-to-zero signal with pre-emphasis signal inputs.
doi:10.7567/1347-4065/ab0741 fatcat:6jpgknl5sffmpbqkzylmw6v6gu