Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Simulation of Thermal Silicon Oxidation Based on a New Physical Model
半導体表面界面形成の微視的理解における理論の進展 新しい物理モデルに基づいたシリコン熱酸化のシミュレーション

Masashi UEMATSU, Hiroyuki KAGESHIMA, Kenji SHIRAISHI
2002 Hyomen Kagaku  
doi:10.1380/jsssj.23.104 fatcat:27f5cu7ofvcnpcehszmriyzc7q