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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Simulation of Thermal Silicon Oxidation Based on a New Physical Model
半導体表面界面形成の微視的理解における理論の進展 新しい物理モデルに基づいたシリコン熱酸化のシミュレーション
2002
Hyomen Kagaku
半導体表面界面形成の微視的理解における理論の進展 新しい物理モデルに基づいたシリコン熱酸化のシミュレーション