A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf
.
Properties of Coplanar Type MIS-SIM Structure Chip Capacitor
1981
ElectroComponent Science and Technology
In MIS-structure, the capacitance depends on applied voltage and its polarity, temperature, 2 oxide thickness and doping level of semiconductor) Coplanar type MIS-SIM structure has been designed and fabricated on low resistivity silicon. The two electrodes are deposited on the thermal oxide grown on silicon. This structure could be analysed by connecting an MIS structure in series with a SIM structure, thus minimising the voltage and temperature variations on capacitance of the MIS-SIM
doi:10.1155/apec.7.227
fatcat:4nduybl6dzdwtnoou4hkzx7wcu