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In this paper, a comparative study of amorphous InGaZnO thin-film transistors with Ta 2 O 5 and TaLaO gate dielectrics has been conducted. It is found that the electrical characteristics of thin-film transistors, including saturation carrier mobility, subthreshold swing, hysteresis, and on-off current ratio, can be effectively improved by the incorporation of La in Ta 2 O 5 gate dielectric, which is ascribed to the fact that La incorporation can enlarge the bandgap of Ta oxide and itsdoi:10.1109/tdmr.2014.2365702 fatcat:4w45vrtowfbljl5rxkmtbmmzxa