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In this work, using a physically based simulator, the modeling of the density of states (DOS) through the fitting of the electrical characteristics in field-effect devices is presented. The transfer characteristic of zinc oxide (ZnO) thin-film transistors is simulated, along with the capacitance–voltage curves in metal-insulator-semiconductor capacitors using ZnO as an active layer. The ZnO semiconductor devices were fabricated by high-frequency ultrasonic spray pyrolysis on polyethylenedoi:10.3390/micromachines2021-09552 fatcat:4ptofuz4yza5xaubwyqt6bel3q