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2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
This paper presents a study of gate stress and threshold voltage instability in commercially available 600/650V GaN high electron mobility transistors (HEMTs). The technologies evaluated are an ohmic gate GaN HEMT and a Schottky gate GaN HEMT. The gate leakage currents have been evaluated for two different gate contact technologies and its temperature dependency is presented. It is shown that the gate leakage current could be a temperature indicator for both technologies evaluated, with adoi:10.23919/epe20ecceeurope43536.2020.9215865 fatcat:7qp7zr6jbjfwzmnuvnkme656nm