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AlGaN/GaN heterostructure field transistor for label-free detection of DNA hybridization
2013
Chinese Science Bulletin
This paper demonstrates electrical detection of single strand deoxyribonucleic acid (ssDNA) conjugation by AlGaN/GaN heterostructure field effect transistor (HFET) biological sensors. The probe ssDNA molecules are modified by thiol groups. The immobilization of probe molecules is achieved by S-Au bonding on a thin layer of gold film in the sensing area. The immobilization and hybridization process are firstly implemented on Si surfaces and checked by fluorescent and atomic force microscopy
doi:10.1007/s11434-013-5783-5
fatcat:xst4nzmsabcndmnsillvw6k3he