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In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n junction termination (RPN). The SBD has a current output of 1 kA/cm 2 at V F = 2.5 V, a low V on of 0.66 V ± 0.017 V, a low R on,sp of 1.4 m ·cm 2 , current ON/OFF ratio of over 10 9 (−3 V∼3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm 2 . It is shown that the presence of thedoi:10.1109/jeds.2020.2980759 fatcat:ll4wjhajgncxpn3mvyjkdrvfau