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Optimization of CNFET Parameters for High Performance Digital Circuits
2016
Advances in Materials Science and Engineering
The Carbon Nanotube Field Effect Transistor (CNFET) is one of the most promising candidates to become successor of silicon CMOS in the near future because of its better electrostatics and higher mobility. The CNFET has many parameters such as operating voltage, number of tubes, pitch, nanotube diameter, dielectric constant, and contact materials which determine the digital circuit performance. This paper presents a study that investigates the effect of different CNFET parameters on performance
doi:10.1155/2016/6303725
fatcat:jd6dj7w75vfjfg7xbckmjgih7q