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In recent years, the development and application of GaN-HFET has become actively, which is one type of a wide band gap semiconductor. The GaN-HFETs has specialize high frequency operation, it is possible to improve the performance of the power converter by improving the switching frequency. In this paper, we describe a basic investigation in the case of GaN-HFETs applied Class-Φ2 inverter circuit, which is a resonant power conversion circuit and operated as an isolated DC-DC converter with a switching frequency at 13.56 MHz.doi:10.5416/jipe.43.73 fatcat:bzaifvyivjc2vkzk3strakujci