Electromagnetic and Semiconductor Modeling of Scanning Microwave Microscopy Setups

Arif Can Gungor, Malgorzata Celuch, Jasmin Smajic, Marzena Olszewska-Placha, Juerg Leuthold
2020 IEEE Journal on Multiscale and Multiphysics Computational Techniques  
This paper presents finite difference time domain (FDTD) and finite element method (FEM) based electromagnetic modeling and simulation of an industrial scanning microwave microscopy (SMM) material measurement setup. These two methods have been employed to cross verify each other for classical electromagnetic simulations of the homogeneous conductive materials under SMM. For the SMM simulations involving semiconductor materials; however, a coupled multiphysics solver is required in addition to
more » ... e pure electromagnetic analysis. As a solution to this problem, a FEM based semiconductor Poisson-Drift-Diffusion (PDD) solver and its coupling to transient electromagnetic solver is presented in this paper. The considered SMM setup consists of a conductive fine tip suspended at a certain height above the sample. For the validation purposes of electromagnetic solvers, the numerical modeling was based on both the time domain FEM (TD-FEM) and FDTD. Both numerical methods extract the scattering parameters from the computed field of the conductive or dielectric samples. At the second stage of the analysis, the TD-FEM solver is coupled with the time domain PDD semiconductor solver in order to simulate charge transport and explain behavior of the charges in semiconducting domains under electromagnetic illumination similar to SMM setups.
doi:10.1109/jmmct.2020.3027908 fatcat:kpfcgoeqz5empji7k2bmbmvmtm