A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
Physical Review B
We use positron annihilation spectroscopy to study 2 MeV 4 He + -irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a rate of 3600 cm −1 . The In vacancies are introduced at a significantly lower rate of 100 cm −1 , making them negligible in the compensation of the irradiation-induced additional n-type conductivity in InN. On the otherdoi:10.1103/physrevb.75.193201 fatcat:ohpxe7w6tvakjejdshzikls4hi