InAsN/InGaAs/InP quantum well structures for midinfrared diode lasers

H.H. Lin, D.K. Shih, Y.H. Lin, K.H. Chiang
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.  
Many spectroscopic and medical applications require lasers with emission wavelength of 2-3 pm. Besides the traditional Sb-based alloys lattice-matched to GaSb substrate, strained InAsNhGaAs
doi:10.1109/leos.2003.1253045 fatcat:jrj7qet6s5bj5lo7hfxliak4hu