The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy

J.J. Bomphrey, M.J. Ashwin, T.S. Jones
2015 Journal of Crystal Growth  
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of $ 5.3 Â 10 10 cm À 2 . Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1-6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.3 70.3 ML, for the growth
more » ... emperatures of 275 1C and 320 1C. Sample growth was conducted in a GEN II MBE system, with a base pressure o2 Â 10 À 10 Torr. The system is equipped with SUMO-type group III sources and a valved cracker (Addon) supplying an Sb 2 flux.
doi:10.1016/j.jcrysgro.2015.03.025 fatcat:r3upmnd5k5afvl7phjib7bvima