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11.6 Gbps 1:4 demultiplexer using double pulse doped quantum well GaAs/AlGaAs transistors
1991
Electronics Letters
Preserved Fulltext
s tored in parallel in the output registers for synchronous data excha nge at the outputs. The outputs are driven by SOQ buffer stages. The gate widths of the 0-FET and E-FET a re 101101 and 20 pm, respectively. The circuit consists of more than 320 active elements. The chip size is 1·2Smm x 1·2S mm (sec F•g. 3).
doi:10.1049/el:19910289
fatcat:hhw6oortonbrfgflwrb74e6ghm