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Improved optical properties of nonpolar AlGaN-based multiple quantum wells emitting at 280 nm
IEEE Photonics Journal
The optical properties of nonpolar AlGaN multiple quantum wells (MQWs) emitting at 280 nm were investigated intensively using temperature-dependent and timeresolved photoluminescence spectra associated with the characterization of structural properties. The densities of superficial pits and basal-plane stacking faults (BSFs) were reduced by 33.8% and 35.9%, respectively, for nonpolar AlGaN MQWs due to the carefully optimized dual nitridation. It was found that the nonpolar MQWs emission can bedoi:10.1109/jphot.2020.3039897 fatcat:eyvla5nhl5f3bpoxn54qas4tby