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Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III
A method is developed for producing nano-structured titanium oxide thin films using H 2 gas interaction with titanium thin film at a high temperature. These nano-structured thin films have been formed on a quartz crystal substrate. Titanium (Ti) thin films were deposited on the quartz crystal using a RF magnetron sputterer. The samples were placed in the oven at 500-800°C for 5 hours. The gas mixture of 1% H 2 in N 2 was introduced in the oven. The process of Ti annealing in the presence of H 2doi:10.1117/12.695539 fatcat:4ykfzjyj5bhotawdgzzqxyzr5y