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Optical absorption of p-n-4H-SiC structures doped with boron and aluminum by low-temperature diffusion was studied for the first time. Diffusion of impurities was performed from aluminum-silicate and boron-silicate films (sources) fabricated by various methods. In the spectral dependences of optical absorption at room temperature, bands associated with transitions from impurity levels, as well as absorption bands associated with defects of the vacancy nature, were observed. The level ofdoi:10.1155/2018/8705658 fatcat:qyp55qn3efbellogtctn557gum