Gated spin transport through an individual single wall carbon nanotube

B. Nagabhirava, T. Bansal, G. U. Sumanasekera, B. W. Alphenaar, L. Liu
2006 Applied Physics Letters  
Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.
doi:10.1063/1.2164367 fatcat:ft3a35w4lrh43d3xqc452lklqa