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Chemical vapor deposition of metal nitrides, phosphides and arsenides. Final report
[report]
1994
unpublished
Preserved Fulltext
We recently demonstrated that dialkykiffiido:cg_plexes, such as Si(NMe2)4, are promising precursors to nitride thin films. On this basis we reaso'h'ed_tha_='tr'ansition metal and main group disilazide complexes in which the silicon has dialkylamido substituents (e.g., [N(Si(NMe2)3)2]-) are potential precursors to ternary silicon nitride films. Bulky disilazide ligands are known to
doi:10.2172/10132455
fatcat:oxkljsm4ofbefh2oj7di4oo3lm