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Low resistance n-contact for UVC LEDs by a two-step plasma etching process
2020
Semiconductor Science and Technology
The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl 3 /Cl 2 gas mixture and a second slow etching step using pure Cl 2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic
doi:10.1088/1361-6641/ab9ea7
fatcat:ytptxcj4qvg4jn42f7jw5fjjny