A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2009; you can also visit the original URL.
The file type is
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive current. We investigate in this paper gate sizing of finFET devices, and we provide a comparison with 32nm bulk CMOS. Wider finFET devices are built utilizing multiple parallel fins between the source and drain. Independent gating of the finFET's double gates allows significant reduction in leakage current. We performdoi:10.1109/dac.2006.229286 fatcat:vyzquuxg4bg7pfxnqqhqrwv75q