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Motivation: Semiconductor heterostructure-based light-emitting diodes (LEDs) and solid-state lasers have benefited enormously from recent developments in materials science and nanotechnology. However, methods to characterize the carrier transport through (and the light emission from) these devices on the nanoscale at which they were designed are limited by the fact that the carrier recombination occurs in layers buried deep below the semiconductor surface. Hence, processes occurring in thesedoi:10.2172/1067346 fatcat:s4rjj2r34nfx5neyrksscvl4fe