Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy To cite this article: Chodipilli Ramesh et al 2019 Jpn. J. Appl. Phys. 58 SC1032 View the article online for updates and enhancements. Recent citations Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil Ch. Ramesh et al -This content was

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... ownloaded from IP address 207.241.231.108 on 12/03/2020 at 23:55 Corrigendum: "Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy" [Jpn. The following corrections are incorporated in this article: 1. On page 1, the sentence "Reference 29 reported the enhancement of GaN nanocolumn alignment when a thin AlN buffer layer was introduced on a graphene-layered Si substrate" is incorrect. It should read "Reference 28 reported the enhancement of GaN nanocolumn alignment when a thin AlN buffer layer was introduced on a graphene-layered silica glass substrate". 2. On page 2, the sentence "Reference 28 reported that native oxide layers on TiN caused by exposure to air only disappear after isothermal annealing at 1000°C in an ultra-high vacuum." is incorrect. It should read "Reference 29 reported that native oxide layers on TiN caused by exposure to air only disappear after isothermal annealing at 1000°C in an ultra-high vacuum". GaN nanorods (NRs) and hollow nanocolumns (HNCs) were grown on flexible Ti foils using laser-assisted molecular beam epitaxy at a growth temperature of 700°C. The shape, size and density of the GaN nanostructures were tuned by surface nitridation and AlN buffer layer growth temperature on a Ti foil. Sparse (∼ 5.5 × 10 8 cm −2 ) GaN NRs were obtained on the bare surface whereas dense (∼3.47 × 10 9 cm −2 ) GaN NRs were grown on the nitridated Ti foil. The shape of the GaN changed from NRs to HNCs by introducing an AlN buffer layer on nitridated Ti foil. Raman spectroscopy showed the grown GaN nanostructures have a wurtzite crystal structure. Room-temperature photoluminescence spectroscopy measurements show that the GaN nanostructures possess an intensive near band edge emission at ∼3.42 eV with a negligible defect-related peak. The growth of tunable GaN nanostructures on flexible metal foils is attractive for flexible optoelectronics and sensor devices.