fects, including the evidence for their existence, and methods for establishing their density, but must also include discussion of such related categories as the means by which the defects are created, how they can be avoided, and their influence on basic properties of the crystal. To abstract the principal features from such an extensive discipline and to present the details in a coherent exposition, and within the confines of a volume that hopefully can be acquired by the average scientist,

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... lls for considerable organizational ability on the part of the author. Rhodes has met this challenge quite admirably. By restricting the scope to phenomena of importance in germanium and silicon, he has achieved significant abridgment. This does not preclude references to other materials when a point is to be illustrated; indeed numerous results are quoted for alkali halides as well as various metals, but it does avoid consideration of various phenomena unique to certain compounds-for example, polar effects and faceting. The organization of the book is such that the introductory chapter, which is devoted to definitions and qualitative explanations of various concepts, is followed by three chapters concerned with dislocations and their detection and with various aspects of plastic deformation. The next three chapters treat the growth of single crystals, the distribution and control of impurities, and the chemical and physical behavior of impurities, including diffusion and precipitation phenomena. The next chapter reviews, in fair detail, the salient findings from radiation damage studies on germanium and silicon, including annealing behavior. The final chapter deals with etching and the nature of various types of etch pits and includes a list of some of the principal etchants for germanium and for silicon. Throughout the volume metallurgy and chemistry are emphasized-for example, in the discussion of the physics of transport processes we must accept the author's word when he makes the following statement in the preface: "It has been assumed that the reader will have some prior acquaintance with the subject of semiconductors. Electronic transport processes and fects, including the evidence for their