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Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping
2015
Energy Procedia
This work focuses on the fabrication of nPERT (Passivated Emitter, Rear Totally Diffused) devices incorporating an epitaxially grown single side rear-emitter. Such epi-nPERT cells are fabricated in a simplified way using the selectivity of the epitaxial deposition, which is obtained by a PECVD-SiOx layer, that not only mask the front but also passivates the cell. The cell performance is studied in terms of : i) various front surface fields (FSF) applied prior to emitter epitaxy and ii) usage of
doi:10.1016/j.egypro.2015.07.075
fatcat:g5zdietp35arrczqmqctux4vma