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VLSI design (Print)
This paper presents a comprehensive physical model for the breakdown process in HEMTs. The model is integrated into in a fast quasi-two-dimensional HEMT physical simulator. The work is based on a full study of the complex interactions between the different breakdown mechanisms and the influence of design parameters. The model takes account of tunnelling effects in the region of the gate metallization, and of the thermal effects in the active channel under the gate region.doi:10.1155/1998/37965 fatcat:5wamcpvt2vgb3geqievsdtr7fu