Model for crystallization kinetics: Deviations from Kolmogorov–Johnson–Mehl–Avrami kinetics

Mario Castro, Francisco Domı́nguez-Adame, Angel Sánchez, Tomás Rodrı́guez
1999 Applied Physics Letters  
We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to
more » ... iations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.
doi:10.1063/1.124965 fatcat:hnrgb5jshzgxxdduq5xojzvaly