Low-Voltage Hot-Electron Currents and Degradation in Deep-Submicrometer MOSFETs

J. Chung, M.-C. Jeng, J.E. Moon, P.K. Ko, C. Hu
1989 Reliability Physics Symposium  
Absrract-Hot-electron currents and degradation in deep submicrometer MOSFET's at 3.3 V and below are studied. Using a device with L", = 0.15 pm and T", = 7.5 nm, substrate current is measured at a drain bias as low as 0.7 V; gate current is measured at a drain bia5 as low as 1.75 V. Using the charge-pumping technique, hot-electron degradation is also observed as drain biases as low as 1.8 V. These voltages are believed to be the lowest repnrted values for which hotelectron currents and
more » ... rrents and degradation have been directly observed. These low-voltage hot-electron phenomena exhibit similar behavior to hotelectron effects present at higher biases and longer channel lengths. N o critical voltage for hot-electron effects (such as the Si-Si02 barrier height) is apparent. Established hot-electron degradation concepts and models are shown to be applicable in the low-voltage deep submicrometer regime. Using these established models, the maximum allowable power supply voltage to insure a 10-year device life-time is determined as a function of channel length (down to 0.15 am) and oxide thicknesses.
doi:10.1109/irps.1989.363368 fatcat:cyd25iakafeklmrmtz55v3fdai