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The dopant-defect interaction in silicon-on-insulator ͑SOI͒ material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to ͑1͒ boron pileup and ͑2͒ defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting ͑a͒ boron pileup at both upper and lower interfaces of the Si film, and ͑b͒ no reduction of the boron clustering in SOI compareddoi:10.1063/1.124604 fatcat:acz6aupiy5ck3ayhesymvmf7le