Thickness-Dependent Physical Properties of Coevaporated Cu4SnS4 Films

V. P. Geetha Vani, M. Vasudeva Reddy, K. T. Ramakrishna Reddy
2013 ISRN Condensed Matter Physics  
Cu4SnS4 films of different thicknesses were prepared by thermal coevaporation technique on glass substrates at a constant substrate temperature of 400°C. The layer thickness was varied in the range 0.25–1 μm. The composition analysis revealed that all the evaporated films were nearly stoichiometric. The XRD patterns indicated the presence of a strong (311) peak as the preferred orientation, following the orthorhombic crystal structure corresponding to Cu4SnS4 films. Raman analysis showed a
more » ... lysis showed a sharp peak at 317 cm−1, also related to Cu4SnS4 phase. The optical transmittance spectra suggested that the energy band gap decreased from 1.47 eV to 1.21 eV with increase of film thickness. The hot-probe test revealed that the layers had p-type electrical conductivity. A decrease of electrical resistivity was observed with the rise of film thickness.
doi:10.1155/2013/142029 fatcat:2idkcdxfbvcyhoo4oxhhhv5hmq