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Cu4SnS4 films of different thicknesses were prepared by thermal coevaporation technique on glass substrates at a constant substrate temperature of 400°C. The layer thickness was varied in the range 0.25–1 μm. The composition analysis revealed that all the evaporated films were nearly stoichiometric. The XRD patterns indicated the presence of a strong (311) peak as the preferred orientation, following the orthorhombic crystal structure corresponding to Cu4SnS4 films. Raman analysis showed adoi:10.1155/2013/142029 fatcat:2idkcdxfbvcyhoo4oxhhhv5hmq