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GaN epitaxial layers with embedded air voids grown on patterned SiO2AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2) and (1 0 2) peaks decreased from 485doi:10.1155/2014/621789 fatcat:ppheemg7uzakbav7u7vg6aksti