Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage

N. Polino, M. Laudato, E. Ambrosi, A. Bricalli, D. Ielmini
2019 ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)  
In this paper we propose a new method of estimating Joule heating in a resistive switching SiOx based device through the use of a micro-thermal stage (MTS). We show an electro-thermal characterization of the device during set/reset operation using the MTS structure as a thermometer, we then attempt to reconstruct the complete heating profile of the device through numerical modeling in COMSOL, then we simulate the reset condition of the device.
doi:10.1109/essderc.2019.8901771 dblp:conf/essderc/PolinoLABI19 fatcat:ncpg2cdusbhyfgg2hvnv6grup4