A numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surfaceemitting lasers (VCSEL's) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the

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... uasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSEL's are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure. Index Terms-Interdiffusion, laser modeling, quantum-well semiconductor lasers, vertical-cavity surface-emitting lasers.