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Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
Applied Physics Letters
N-type and p-type GaSb metal-oxide-semiconductor capacitors ͑MOSCAPs͒ with atomic-layer-deposited ͑ALD͒ and plasma-enhanced-ALD ͑PEALD͒ Al 2 O 3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al 2 O 3 / GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density ͑D it ͒ whereas the PEALD Al 2 O 3 / GaSb MOSCAPs show unpinned C-V characteristics ͑low D itdoi:10.1063/1.3492847 fatcat:rdjkfu7jpna5zbcn4ow4vi5fuu